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Title: Sputter-deposited Be ablators for NIF target capsules

Abstract

We have performed a series of preliminary experiments to determine whether sputter deposition of doped Be is a practical route to producing NIF target capsules with Be ablators. Films ranging in thickness from 7 to {approximately} 120 {micro}m have been deposited on spherical polymer mandrels using a bounce pan to ensure uniform coating. With no voltage bias applied to the pan, relatively porous coatings were formed that were highly permeable to hydrogen. The surface finish of these films ranged from {approximately}250 nm rms for 13-{micro}m-thick films to a minimum of {approximately}75 nm rms for an 80-{micro}m-thick film. Application of a voltage bias was found to significantly modify the film morphology. At a bias of 120 V, 7-{micro}m-thick films with a dense, fine-grained microstructure were produced. These capsules had a reflective surface with a 50 nm rms roughness. Finally, to demonstrate the ability to produce a graded dopant profile, a coating was produced in which the concentration of added Cu was varied from 2.5 atom % at the beginning to zero after 40 {micro}m of deposition.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States)
OSTI Identifier:
645373
Report Number(s):
UCRL-JC-127112; CONF-9609225-
ON: DE98051138; TRN: 98:008904
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: 11. target fabrication specialist meeting, Orcas Island, WA (United States), 8-12 Sep 1996; Other Information: PBD: 26 Mar 1997
Country of Publication:
United States
Language:
English
Subject:
70 PLASMA PHYSICS AND FUSION; US NATIONAL IGNITION FACILITY; LASER TARGETS; SPUTTERING; BERYLLIUM; ABLATION

Citation Formats

McEachern, R, Clford, C, Cook, R, Makowiecki, E, and Wallace, R. Sputter-deposited Be ablators for NIF target capsules. United States: N. p., 1997. Web.
McEachern, R, Clford, C, Cook, R, Makowiecki, E, & Wallace, R. Sputter-deposited Be ablators for NIF target capsules. United States.
McEachern, R, Clford, C, Cook, R, Makowiecki, E, and Wallace, R. 1997. "Sputter-deposited Be ablators for NIF target capsules". United States. https://www.osti.gov/servlets/purl/645373.
@article{osti_645373,
title = {Sputter-deposited Be ablators for NIF target capsules},
author = {McEachern, R and Clford, C and Cook, R and Makowiecki, E and Wallace, R},
abstractNote = {We have performed a series of preliminary experiments to determine whether sputter deposition of doped Be is a practical route to producing NIF target capsules with Be ablators. Films ranging in thickness from 7 to {approximately} 120 {micro}m have been deposited on spherical polymer mandrels using a bounce pan to ensure uniform coating. With no voltage bias applied to the pan, relatively porous coatings were formed that were highly permeable to hydrogen. The surface finish of these films ranged from {approximately}250 nm rms for 13-{micro}m-thick films to a minimum of {approximately}75 nm rms for an 80-{micro}m-thick film. Application of a voltage bias was found to significantly modify the film morphology. At a bias of 120 V, 7-{micro}m-thick films with a dense, fine-grained microstructure were produced. These capsules had a reflective surface with a 50 nm rms roughness. Finally, to demonstrate the ability to produce a graded dopant profile, a coating was produced in which the concentration of added Cu was varied from 2.5 atom % at the beginning to zero after 40 {micro}m of deposition.},
doi = {},
url = {https://www.osti.gov/biblio/645373}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Mar 26 00:00:00 EST 1997},
month = {Wed Mar 26 00:00:00 EST 1997}
}

Conference:
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