Hydrogen in semiconductors

Conference · Fri Jun 01 00:00:00 EDT 1990

OSTI ID:6448147

Haller, E E ^[1]

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1. California Univ., Berkeley, CA (USA) Lawrence Berkeley Lab., CA (USA)

After an incubation'' period in the 1970's and early 80's, during which the first hydrogen related centers were discovered and characterized in ultra-pure germanium, a sharp increase of research activity occurred after the discovery of shallow acceptor passivation in crystalline silicon. The aim of this review is to convey an insight into the rich, multifaceted physics and materials science which has emerged from the vast variety of experimental and theoretical studies of hydrogen in semiconductors. In order to arrive at the current understanding of hydrogen related phenomena in a logical way, each chapter will start with a brief review of the major experimental and theoretical advances of the past few years. Those who are interested to learn more about this fascinating area of semiconductor research are referred to reviews, to a number of conference proceedings volumes, and to an upcoming book which will contain authoritative chapters on most aspects of hydrogen in crystalline semiconductors. Some of the early art of semiconductor device processing can finally be put on a scientific foundation and new ways of arriving at advanced device structures begin to use what we have learned from the basic studies of hydrogen in semiconductors. 92 refs., 8 figs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6448147
• Report Number(s): LBL-28691; CONF-900866-1; ON: DE91005292; CNN: DMR-88-06756
• Resource Relation: Conference: 20. international Union of Pure and Applied Physics of semiconductors, Thessaloniki (Greece), 6-10 Aug 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SEMICONDUCTOR MATERIALS
IMPURITIES
CHEMICAL ACTIVATION
DIFFUSION
ELECTRIC FIELDS
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
HYDRIDATION
HYDROGEN
MOTION
SEMICONDUCTOR DEVICES
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
ELEMENTS
GALLIUM COMPOUNDS
MATERIALS
NONMETALS
PNICTIDES
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