Characterization of GaAs/Si interface structure by x-ray diffraction

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6444301

Specht, E D; Ice, G E; Peters, C J; Sparks, C J ^[1]; Lucas, N; Zhu, X -M; Moret, R; Morkoc, H ^[2]

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1. Oak Ridge National Lab., TN (USA)
2. Illinois Univ., Urbana, IL (USA)

By measuring the intensity profiles along the crystal truncation rods of a Si(001) substrate, we obtain the depth sensitivity necessary for x-ray diffraction measurements of the structure of its interface with a thick GaAs overlayer which is epitaxial to, but not in registry with the substrate. By comparing the diffraction with a model based on a grid of misfit dislocations, we find that the atoms at the interface have a root mean square displacement of 1.09 {plus minus} 0.1 {angstrom} from this ideal structure, and that the interface has a roughness of 2.9 {plus minus} 1 {angstrom}. The diffraction indicates an anomalously small strain perpendicular to the interface in the GaAs near the interface. 19 refs., 4 figs.

• Research Organization: Oak Ridge National Lab., TN (USA); Illinois Univ., Urbana, IL (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC05-84OR21400; AC02-76ER01198; AC02-76CH00016
• OSTI ID: 6444301
• Report Number(s): CONF-901105-30; ON: DE91004769
• Resource Relation: Conference: Fall meeting of the Materials Research Society, Boston, MA (USA), 24 Nov - 1 Dec 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INTERFACES
SILICON
DISLOCATIONS
FILMS
STACKING FAULTS
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELEMENTS
GALLIUM COMPOUNDS
LINE DEFECTS
PNICTIDES
SCATTERING
SEMIMETALS
360602* - Other Materials- Structure & Phase Studies