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Title: Threshold energy surface and Frenkel-pair resistivity for Cu

Conference ·
OSTI ID:6436055

In-situ electrical resistivity damage-rate measurements in the high voltage electron microscope have been used to study electron-irradiation-induced defect production in copper single crystals at T < 10/sup 0/K. Analysis of the directional and energy dependence yields a threshold energy surface that is significantly different from those of previous investigations: two pockets of low threshold energy centered at <100> and <110> surrounded by regions of much higher threshold energy. The corresponding damage function exhibits a plateau of 0.6 Frenkel pairs. the present results imply a Frenkel pair resistivity for C of (2.75/sub -0.2//sup +0.6/) x ..cap omega..-cm.

Research Organization:
Argonne National Lab., IL (USA); Northwestern Univ., Evanston, IL (USA)
DOE Contract Number:
W-31-109-ENG-38
OSTI ID:
6436055
Report Number(s):
CONF-821049-18; ON: DE83008694
Resource Relation:
Conference: TMS/AIME fall meeting, St. Louis, MO, USA, 24 Oct 1982
Country of Publication:
United States
Language:
English