Size dependence of selectively oxidized VCSEL transverse mode structure

Conference · Fri May 01 00:00:00 EDT 1998

OSTI ID:642785

Hegarty, S P; Huyet, G ^[1]; McInerney, J G ^[1]; Choquette, K D; Hou, H Q; Geib, K M ^[2]

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1. University College, Cork (Ireland). Physics Dept.
2. Sandia National Labs., Albuquerque, NM (United States). Center for Compound Semiconductor Science and Technology

The performance of vertical cavity surface emitting lasers (VCSELs) has improved greatly in recent years. Much of this improvement can be attributed to the use of native oxide layers within the laser structure, providing both electrical and optical transverse confinement. Understanding this optical confinement will be vital for the future realization of yet smaller lasers with ultralow threshold currents. Here the authors report the spectral and modal properties of small (0.5 {micro}m to 5 {micro}m current aperture) VCSELs and identify Joule heating as a dominant effect in the resonator properties of the smallest lasers.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Office of Financial Management and Controller, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 642785
• Report Number(s): SAND-98-0367C; CONF-980529-; ON: DE98002898; BR: YN0100000; TRN: AHC2DT02%%111
• Resource Relation: Conference: Conference on lasers and electro-optics, San Francisco, CA (United States), 3-8 May 1998; Other Information: PBD: May 1998
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
SEMICONDUCTOR LASERS
PERFORMANCE
SIZE
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
OPTICAL PROPERTIES
LASER CAVITIES
THRESHOLD CURRENT