Study and development of tunable, single mode AlGaAs/GaAs lasers
Abstract
Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.
- Authors:
-
- California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering
- Publication Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Org.:
- DOE/DP
- OSTI Identifier:
- 6427145
- Report Number(s):
- UCRL-CR-104625
ON: DE91001684
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Technical Report
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; GALLIUM ARSENIDES; JOINING; SEMICONDUCTOR LASERS; FABRICATION; ALUMINIUM COMPOUNDS; BRAGG REFLECTION; ELECTRON BEAMS; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; LIQUID PHASE EPITAXY; MATHEMATICAL MODELS; OPTICAL PROPERTIES; PHOSPHORUS COMPOUNDS; SIGNALS; WAVELENGTHS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; EPITAXY; GALLIUM COMPOUNDS; LASERS; LEPTON BEAMS; PARTICLE BEAMS; PHOSPHIDES; PHYSICAL PROPERTIES; PNICTIDES; REFLECTION; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)
Citation Formats
Yu, P K.L., and Liu, J C. Study and development of tunable, single mode AlGaAs/GaAs lasers. United States: N. p., 1990.
Web. doi:10.2172/6427145.
Yu, P K.L., & Liu, J C. Study and development of tunable, single mode AlGaAs/GaAs lasers. United States. https://doi.org/10.2172/6427145
Yu, P K.L., and Liu, J C. 1990.
"Study and development of tunable, single mode AlGaAs/GaAs lasers". United States. https://doi.org/10.2172/6427145. https://www.osti.gov/servlets/purl/6427145.
@article{osti_6427145,
title = {Study and development of tunable, single mode AlGaAs/GaAs lasers},
author = {Yu, P K.L. and Liu, J C},
abstractNote = {Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.},
doi = {10.2172/6427145},
url = {https://www.osti.gov/biblio/6427145},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Sep 01 00:00:00 EDT 1990},
month = {Sat Sep 01 00:00:00 EDT 1990}
}
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