Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Final technical report, July 1, 1979-June 30, 1980
The first objective is to determine whether field effect could be observed in samples of sputtered hydrogenated amorphous silicon, and, if it could, to compare the pseudogap density of states determined therefrom with estimates made by other methods of investigation. The second is to determine the drift mobility of excess carriers in these materials by time-of-flight, and to interpret its magnitude and temperature dependence in terms of current theories of transport in disordered semiconductors. The field effect has been observed, but the conditions required are such as to imply that deductions of the state density from it may not accurately represent the bulk density of states. In the course of this work a simpler method of reducing field effect data has been developed. The drift mobility has also been measured, but these experiments have not yet assembled sufficient statistics for final conclusions to be drawn from them.
- Research Organization:
- Harvard Univ., Cambridge, MA (USA). Div. of Applied Sciences
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-79ET23037
- OSTI ID:
- 6419168
- Report Number(s):
- DOE/ET/23037-4
- Country of Publication:
- United States
- Language:
- English
Similar Records
Determination of PSEUDOGAP state density and carrier mobility in r. f. sputtered amorphous silicon. Quarterly technical progress report, July 1, 1979-September 30, 1979
Determination of pseudogap state density and carrier mobility in rf sputtered amorphous silicon. Quarterly technical progress report, January-March 31, 1980
Related Subjects
14 SOLAR ENERGY
SILICON
CARRIER MOBILITY
ENERGY-LEVEL DENSITY
AMORPHOUS STATE
CAPACITANCE
ELECTRIC CONDUCTIVITY
FIELD EFFECT TRANSISTORS
FREQUENCY DEPENDENCE
HYSTERESIS
IMPURITIES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MIS TRANSISTORS
SCHOTTKY BARRIER DIODES
SPUTTERING
TIME DEPENDENCE
TIME-OF-FLIGHT METHOD
CHEMICAL ANALYSIS
ELECTRICAL PROPERTIES
ELEMENTS
MICROANALYSIS
MOBILITY
NONDESTRUCTIVE ANALYSIS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SPECTROSCOPY
TRANSISTORS
360603* - Materials- Properties
140501 - Solar Energy Conversion- Photovoltaic Conversion