Silicon drift devices for track and vertex detection at the SSC

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6377690

Chen, W; Kraner, H; Li, Z; Ng, C; Radeka, V; Rehak, P; Rescia, S ^[1]; Clark, J; Henderson, S; Hsu, L; Oliver, J; Wilson, R ^[2]; Clemen, M; Humanic, T; Kraus, D; Vilkelis, G; Yu, B ^[3]; McDonald, K; Lu, C; Wall, M ^[4] ; Vacchi, A ^[5]; Bert,

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1. Brookhaven National Lab., Upton, NY (USA)
2. Harvard Univ., Cambridge, MA (USA)
3. Pittsburgh Univ., PA (USA)
4. Princeton Univ., NJ (USA)
5. Rockefeller Univ., New York, NY (USA)

We report on the recent progress in the study of Semiconductor Drift (Memory) Detectors intended for an inner tracking and vertexing system for the SSC. The systematic studies and the calibration of the existing detectors and the simulated performance in the actual SSC environment are highlighted. 5 refs., 22 figs., 1 tab.

• Research Organization: Brookhaven National Lab., Upton, NY (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 6377690
• Report Number(s): BNL-45296; CONF-9010212-20; ON: DE91004007; TRN: 91-001057
• Resource Relation: Conference: Symposium on detector research and development for the Superconducting Super Collider, Fort Worth, TX (USA), 15-18 Oct 1990
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SI SEMICONDUCTOR DETECTORS
DESIGN
CALIBRATION
PARTICLE TRACKS
SIMULATION
SUPERCONDUCTING SUPER COLLIDER
TEMPERATURE DEPENDENCE
MEASURING INSTRUMENTS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
STORAGE RINGS
440104* - Radiation Instrumentation- High Energy Physics Instrumentation