Study of semiconductor valence plasmon line shapes via electron energy-loss spectroscopy in the transmission electron microscope

Technical Report · Tue Nov 01 00:00:00 EST 1988

DOI:https://doi.org/10.2172/6340092· OSTI ID:6340092

Kundmann, M K

Electron energy-loss spectra of the semiconductors Si, AlAs, GaAs, InAs, InP, and Ge are examined in detail in the regime of outer-shell and plasmon energy losses (0--100eV). Particular emphasis is placed on modeling and analyzing the shapes of the bulk valence plasmon lines. A line shape model based on early work by Froehlich is derived and compared to single-scattering probability distributions extracted from the measured spectra. Model and data are found to be in excellent agreement, thus pointing the way to systematic characterization of the plasmon component of EELS spectra. The model is applied to three separate investigations. 82 refs.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6340092
• Report Number(s): LBL-26617; ON: DE89008152; TRN: 89-007957
• Resource Relation: Other Information: Thesis (Ph.D.). Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
A CODES
DATA ACQUISITION SYSTEMS
PLASMONS
LINE WIDTHS
SEMICONDUCTOR MATERIALS
ENERGY-LOSS SPECTROSCOPY
ELECTRON SPECTRA
SILICON
TRANSMISSION ELECTRON MICROSCOPY
COMPUTER CODES
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
ELEMENTS
MATERIALS
MICROSCOPY
QUASI PARTICLES
SEMIMETALS
SPECTRA
SPECTROSCOPY
656002* - Condensed Matter Physics- General Techniques in Condensed Matter- (1987-)