Crystalline-to-amorphous phase transition in irradiated silicon

Conference · Wed Jan 01 00:00:00 EST 1986

OSTI ID:6304507

Seidman, D N; Averback, R S; Okamoto, P R; Baily, A C

The amorphous(a)-to-crystalline (c) phase transition has been studied in electron(e ) and/or ion irradiated silicon (Si). The irradiations were performed in situ in the Argonne High Voltage Microscope-Tandem Facility. The irradiation of Si, at <10K, with 1-MeV e to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at <10K, with 1.0 or 1.5-MeV Kr+ ions induced the c-to-a transition by a fluence of approx.0.37 dpa. Alternatively a dual irradiation, at 10K, with 1.0-MeV e and 1.0 or 1.5-MeV Kr+ to a Kr+ fluence of 1.5 dpa - where the ratio of the displacement rates for e to ions was approx.0.5 - resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of damage and the mobilities of point defects.

• Research Organization: Argonne National Lab., IL (USA); Northwestern Univ., Evanston, IL (USA). Dept. of Materials Science
• DOE Contract Number: W-31-109-ENG-38
• OSTI ID: 6304507
• Report Number(s): CONF-851217-40; ON: DE86006170
• Resource Relation: Conference: Materials Research Society meeting, Boston, MA, USA, 2 Dec 1985
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
PHYSICAL RADIATION EFFECTS
AMORPHOUS STATE
ELECTRON BEAMS
ION BEAMS
KRYPTON IONS
PHASE TRANSFORMATIONS
POINT DEFECTS
ULTRALOW TEMPERATURE
BEAMS
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
IONS
LEPTON BEAMS
PARTICLE BEAMS
RADIATION EFFECTS
SEMIMETALS
360605* - Materials- Radiation Effects