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Title: Preparation and properties of evaporated CdTe films: Final subcontract report, 16 February 1985-31 March 1987

Technical Report ·
DOI:https://doi.org/10.2172/6302999· OSTI ID:6302999

Previous work on evaporated CdTe films for photovoltaics showed no clear path to successful p-type doping of CdTe during deposition. Post-deposition annealing of the films in various ambients thus was examined as a means of doping. Anneals were done in Te, Cd, P, and As vapors and in vacuum, air and Ar, all of which showed large effects on series resistance and diode parameters. With As, series resistance values of In/p-CdTe/graphite structures decreased markedly. This decrease was due to a decrease in grain boundary and/or back contact barrier height, and thus was due to large increases in mobility; the carrier density was not altered substantially. Although the series-resistance decreases were substantial, the diode characteristics became worse. The decreases were not observed when CdS/CdTe cells were fabricated on Te vapor-annealed films. Preparation of ZnO films by reactive evaporation yielded promising results. Deposition of p-ZnTe films by hot-wall vapor evaporation, using conventional techniques, yielded acceptable films without intentional doping.

Research Organization:
Stanford Univ., CA (United States); Solar Energy Research Inst. (SERI), Golden, CO (United States)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
6302999
Report Number(s):
SERI/STR-211-3190; ON: DE87012270
Resource Relation:
Other Information: Portions of this document are illegible in microfiche products. Original copy available until stock is exhausted
Country of Publication:
United States
Language:
English