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Title: Preparation and properties of evaporated CdTe films compared with single crystal CdTe. Progress report No. 2, February 1-April 30, 1981

Technical Report ·
DOI:https://doi.org/10.2172/6299176· OSTI ID:6299176

The design, construction and testing of the hot-wall vacuum evaporation system is proceeding on schedule. The vacuum system, a Varian 3118 diffusion pump system, has been installed and tested. A calculation of the optimum possible efficiency for an n-p CdTe homojunction indicates a value of 14%. A complete background is given on the growth of over fifty CdTe single crystals at Stanford, the last four of which were grown as part of this program. Use of crystal regrowth and vibration during growth both increase crystal quality. Higher electrical activity of phosphorus acceptors in CdTe is achieved when 0.1% excess Te is used in place of 0.5% excess Te. Careful characterization of boules grown for this program are underway, using Hall effect or capacitance-voltage data on selected samples. Initial investigation of the properties of grain boundaries in p-type CdTe : P crystals indicates a grain boundary height of 0.44 eV unaffected by illumination. These results suggest that grain boundaries are more strongly pinned in p-type than in n-type CdTe.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States); Stanford Univ., CA (USA). Dept. of Materials Science and Engineering
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6299176
Report Number(s):
SERI/PR-9330-1-T2; ON: DE81023079
Country of Publication:
United States
Language:
English