Backside localization of open and shorted IC interconnections
A new failure analysis technique has been developed for backside and frontside localization of open and shorted interconnections on ICs. This scanning optical microscopy technique takes advantage of the interactions between IC defects and localized heating using a focused infrared laser ({lambda} = 1,340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The method utilizes the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detects shorts. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed.
- Research Organization:
- Sandia National Labs., Electronics Quality/Reliability Center, Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 629451
- Report Number(s):
- SAND-98-1652C; CONF-980320-; ON: DE98003971; TRN: AHC29812%%114
- Resource Relation:
- Conference: 1998 Institute of Electrical and Electronics Engineers (IEEE) international reliability physics symposium, Reno, NV (United States), 30 Mar - 2 Apr 1998; Other Information: PBD: [1998]
- Country of Publication:
- United States
- Language:
- English
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