GaN Device Processing

Conference · Thu Jan 01 00:00:00 EST 1998

OSTI ID:622943

Pearton, S J ^[1]; Ren, F ^[2]; Zolper, J C ^[3]; Shul, R J ^[4]

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1. University of Florida, Gainesville, FL (United States)
2. Bell Laboratories, Lucent Technologies, Murray Hill, NJ (United States)
3. Office of Naval Research, Arlington, VA (United States)
4. Sandia National Labs., Albuquerque, NM (United States)

Recent progress in the development of dry and wet etching techniques, implant doping and isolation, thermal processing, gate insulator technology and high reliability contacts is reviewed. Etch selectivities up to 10 for InN over AlN are possible in Inductively Coupled Plasmas using a Cl2/Ar chemistry, but in general selectivities for each binary nitride relative to each other are low ({lt} OR = 2) BECAUSE OF THE HIGH ION ENERGIES NEEDED TO INITIATE ETCHING. IMPROVED N-TYPE OHMIC CONTACT RESISTANCES ARE OBTAINED BY SELECTIVE AREA SI+ IMPLANTATION FOLLOWED BY VERY HIGH TEMPERATURE ({gt}1300 deg C) anneals in which the thermal budget is minimized and AlN encapsulation prevents GaN surface decomposition. Implant isolation is effective in GaN, AlGaN and AlInN, but marginal in InGaN. Candidate gate insulators for GaN include AlN, AlON and Ga(Gd)O(x), but interface state densities are still to high to realize state-of-the-art MIS devices.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Management and Administration, Washington, DC (United States); USDOE Office of Financial Management and Controller, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 622943
• Report Number(s): SAND-98-0132C; CONF-971201-; ON: DE98002578; TRN: AD-a339 555
• Resource Relation: Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: Jan 1998
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
36 MATERIALS SCIENCE
GALLIUM NITRIDES
FABRICATION
THERMODYNAMIC PROPERTIES
IONS
DENSITY
INTERFACES
TEMPERATURE RANGE 0400-1000 K
ELECTRICAL INSULATION
GATING CIRCUITS
ETCHING
MOISTURE
SURFACES
OXIDES
ALUMINIUM
CHLORIDES
ENCAPSULATION
CRYSTAL DOPING
N-TYPE CONDUCTORS
ANNEALING
ARGON
GADOLINIUM
DECOMPOSITION
INDIUM
ION IMPLANTATION
ELECTRIC CONTACTS
ALUMINIUM NITRIDES
INDIUM NITRIDES
GALLIUM OXIDES
GADOLINIUM OXIDES
GATE INSULATOR TECHNOLOGY
INDUCTIVELY COUPLED PLASMAS
MIS(METAL INSULATOR SEMICONDUCTOR)