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Title: Hydrogenated amorphous silicon radiation detectors: Material parameters, radiation hardness, charge collection

Technical Report ·
DOI:https://doi.org/10.2172/6185190· OSTI ID:6185190

For nearly two decades now hydrogenated amorphous silicon has generated considerable interest for its potential use in various device applications namely, solar cells, electrolithography, large-area electronics etc. The development of efficient and economic solar cells has been on the forefront of this research. This interest in hydrogenated amorphous silicon has been motivated by the fact that amorphous silicon can be deposited over a large area at relatively low cost compared to crystalline silicon. Hydrogenated amorphous silicon, frequently abbreviated as a-Si:H, used in solar-cell applications is a micron or less thick. The basic device structure is a p-i-n diode where the i layer is the active layer for radiation to interact. This is so because intrinsic a-Si:H has superior electrical properties in comparison to doped a-Si:H which serves the purpose of forming a potential barrier on either end of the i layer. The research presented in this dissertation was undertaken to study the properties of a-Si:H for radiation detection applications in physics and medicine.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6185190
Report Number(s):
LBL-30292; ON: DE91009082; TRN: 91-008382
Resource Relation:
Other Information: Thesis (Ph.D.)
Country of Publication:
United States
Language:
English