Microstore: the Stanford analog memory unit

Conference · Thu Nov 01 00:00:00 EST 1984

OSTI ID:6116810

Walker, J T; Chae, S I; Shapiro, S; Larsen, R S

An NMOS device has been developed which provides high speed analog signal storage and readout for time expansion of transient signals. This device takes advantage of HMOS-1 VLSI technology to implement an array of 256 storage cells. Sequential samples of an input waveform can be taken every 5 ns while providing an effective sampling aperture time of less than 1 ns. The design signal-to-noise ratio is 1 part in 2000. Digital control circuitry is provided on the chip for controlling the read-in and read-out processes. A reference circuit is incorporated in the chip for first order compensation of leakage drifts, sampling pedestals, and temperature effects.

• Research Organization: Stanford Univ., CA (USA). Stanford Electronics Labs.; Stanford Linear Accelerator Center, CA (USA)
• DOE Contract Number: AC03-76SF00515
• OSTI ID: 6116810
• Report Number(s): SLAC-PUB-3503; CONF-841007-61; ON: DE85005534
• Resource Relation: Conference: Nuclear science symposium, Orlando, FL, USA, 31 Oct 1984; Other Information: Portions of this document are illegible in microfiche products. Original copy available until stock is exhausted
• Country of Publication: United States
• Language: English

Related Subjects

99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
MEMORY DEVICES
ANALOG SYSTEMS
ANALOG-TO-DIGITAL CONVERTERS
CONTROL SYSTEMS
DATA ACQUISITION SYSTEMS
ELECTRONIC CIRCUITS
INTEGRATED CIRCUITS
TRANSIENTS
ELECTRONIC EQUIPMENT
EQUIPMENT
MICROELECTRONIC CIRCUITS
990200* - Mathematics & Computers