Atom location by electron channeling analysis
For many years the orientation dependence of the characteristic x-ray emission close to a Bragg reflection has been regarded as a hindrance to accurate microanalysis, and a random incident beam direction has always been recommended for accurate composition analysis. However, this orientation dependence can be put to use to extract information on the lattice location of foreign atoms within the crystalline matrix. Here a generalization of the technique is described which is applicable to any crystal structure including monatomic crystals, and can quantitatively determine substitutional fractions of impurities. The technique was referred to as electron channeling analysis, by analogy with the closely related and widely used bulk technique of ion channeling analysis, and was developed for lattice location studies of dopants in semiconductors at high spatial resolution. Only two spectra are required for each channeling analysis, one in each of the channeling conditions described above. If the matrix and dopant x-ray yields vary identically between the two orientations then the dopant necessarily lies within the reflecting matrix planes. If the dopant x-ray yield does not vary the dopant atoms are randomly located with respect to the matrix planes. 10 references, 2 figures.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 6089985
- Report Number(s):
- CONF-840767-17-Draft; ON: DE85007549
- Resource Relation:
- Conference: Microbeam Analysis Society analytical electron microscopy meeting, Bethlehem, PA, USA, 16 Jul 1984
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ELECTRON MICROPROBE ANALYSIS
ELECTRON CHANNELING
CRYSTAL LATTICES
IMPURITIES
SPATIAL DISTRIBUTION
X-RAY SPECTRA
CHANNELING
CHEMICAL ANALYSIS
CRYSTAL STRUCTURE
DISTRIBUTION
MICROANALYSIS
SPECTRA
640301* - Atomic
Molecular & Chemical Physics- Beams & their Reactions