LPCVD tungsten deposition on Si-Ge alloy

Conference · Sun Jan 01 00:00:00 EST 1984

OSTI ID:6088250

Rossmeisl, R A; Wells, V A; Walko, R J

The Radioisotope Thermoelectric Generator (RTG) consists of a heat source, an 80/20 Si-Ge thermopile, MIN-K insulation, and a stainless steel container. The dc diode sputtered tungsten bridges interconnect alternate wafers in the thermopile. The diffusion of silicon into the tungsten interconnects appears to be the cause of a sudden increase in contact resistance after a period of time. The low pressure chemical vapor deposition (LPCVD) technique is compared with sputtering for this reason. LPCVD is found to be simpler than sputtering, self-cleaning, and not prone to damage the surface as does sputtering. Aging profiles are found to tend toward the high end of the acceptance window. (LEW)

• Research Organization: Science Applications, Inc., Rockville, MD (USA); Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6088250
• Report Number(s): SAND-84-2267C; CONF-8411141-1; ON: DE85005588
• Resource Relation: Conference: Workshop on tungsten for VLSI applications, Albuquerque, NM, USA, 12 Nov 1984
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPES AND RADIATION SOURCES
THERMOELECTRIC GENERATORS
CHEMICAL VAPOR DEPOSITION
AGING
DIFFUSION
ELECTRIC CONTACTS
GERMANIUM
RADIOISOTOPE BATTERIES
SILICON
TUNGSTEN
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
METALS
SEMIMETALS
SURFACE COATING
TRANSITION ELEMENTS
NESDPS Office of Nuclear Energy Space and Defense Power Systems
070301* - Isotopic Power Supplies- Design & Fabrication- (-1987)