The rate-limiting mechanism of transition metal gettering in multicrystalline silicon
- Lawrence Berkeley National Lab., CA (United States)
- Toyota Technological Institute, Nagoya (Japan); and others
Multicrystalline silicon is a very interesting material for terrestrial solar cells. Its low cost and respectable energy conversion efficiency (12-15%) makes it arguably the most cost competitive material for large-volume solar power generation. However, the solar cell efficiency of this material is severely degraded by regions of high minority carrier recombination which have been shown to possess both dislocations and microdefects. These structural defects are known to increase in recombination activity with transition metal decoration. Therefore, gettering of metal impurities from the material would be expected to greatly enhance solar cell performance. Contrary to this rationale, experiments using frontside phosphorus and/or backside aluminum treatments have been found to improve regions with low recombination activity while having little or no effect on the high recombination regions and in turn only slightly improving the overall cell performance. The goal of this research is to determine the mechanism by which gettering is ineffectual on these high recombination regions. The authors have performed studies on integrated circuit (IC) quality single crystal and multicrystalline solar cell silicon (mc-silicon) in the as-grown state and after a variety of processing/gettering steps. With Surface Photovoltage measurements of the minority carrier diffusion length which is inversely proportional to carrier recombination, they have seen that aluminum gettering is effective for improving IC quality material but ineffective for improving the regions of initially low diffusion lengths (high recombination rates) in mc-silicon. Of particular interest is the great increase in diffusion length for IC material as compared to the mc-silicon. Clearly the IC material has benefited to a greater extent from the gettering procedure than the mc-silicon.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 603698
- Report Number(s):
- LBNL-39981; ON: DE97007345; TRN: 98:009621
- Resource Relation:
- Other Information: PBD: Apr 1997; Related Information: Is Part Of Advanced light source: Compendium of user abstracts 1993--1996; PB: 622 p.
- Country of Publication:
- United States
- Language:
- English
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