The effect of co-implantation on the electrical activity of implanted carbon in GaAs

Conference · Fri Nov 01 00:00:00 EST 1991

OSTI ID:5831776

Moll, A J; Walukiewicz, W; Yu, K M; Hansen, W L; Haller, E E

We have undertaken a systematic study of the effect of co- implantation on the electrical properties of C implanted in GaAs. Two effects have been studied, the additional damage caused by co- implantation and the stoichiometry in the implanted layer. A series of co-implant ions were used: group III (B, Al, Ga), group V (N, P, As) and noble gases (Ar, Kr). Co-implantation of ions which create an amorphous layer was found to increase the electrical activity of C. Once damage was created, maintaining stoichiometric balance by co-implantation of a group III further increased the fraction of electrically active carbon impurities. Co-implantation of Ga and rapid thermal annealing at 950{degree}C for 10s resulted in carbon activation as high as 68%, the highest value ever reported.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5831776
• Report Number(s): LBL-31207; CONF-911202-63; ON: DE92008307
• Resource Relation: Conference: Annual fall meeting of the Materials Research Society, Boston, MA (United States), 2-6 Dec 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
ION IMPLANTATION
ANNEALING
CARBON IONS
GALLIUM IONS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELEMENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
IONS
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
360606* - Other Materials- Physical Properties- (1992-)
360605 - Materials- Radiation Effects