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Title: Resistance behavior of Cr-Si-O thin films

Abstract

Thin coatings of Cr-Si-O are assessed for use as a resistor. The submicron thick films are sputter deposited using a (l-x)Ar-(x)O{sub 2} working gas. Several compacts of metal and oxide powders are commercially prepared for use as the sputter targets. The deposition process yields film compositions which range from 2 to 30 at.% Cr and 20 to 45 at.% Si as measured using Rutherford backscattering. A broad range of resistivities from 10{sup 1} to 10{sup 14}{Omega} cm are found as measured through the film thickness between metal pads deposited onto the Cr-Si-O surface. The film structure and morphology are characterized using transmission electron microscopy from which the resistance behavior can be correlated to the distribution of metallic particles. Thermal aging reveals the metastability of the Cr- Si-O film morphology and resistance behavior.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
OSTI Identifier:
574773
Report Number(s):
UCRL-JC-125296; CONF-970201-
ON: DE98050228
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Conference
Resource Relation:
Conference: 126. annual meeting of the Minerals, Metals and Materials Society, Orlando, FL (United States), 9-13 Feb 1997; Other Information: PBD: 23 Oct 1996
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; ELECTRIC CONDUCTIVITY; CHROMIUM OXIDES; SILICON OXIDES

Citation Formats

Jankowski, A F, Hayes, J P, Musket, R, Cosandey, F, Gorla, C E, Besser, R S, Westerlind, V, and Cobai, G. Resistance behavior of Cr-Si-O thin films. United States: N. p., 1996. Web.
Jankowski, A F, Hayes, J P, Musket, R, Cosandey, F, Gorla, C E, Besser, R S, Westerlind, V, & Cobai, G. Resistance behavior of Cr-Si-O thin films. United States.
Jankowski, A F, Hayes, J P, Musket, R, Cosandey, F, Gorla, C E, Besser, R S, Westerlind, V, and Cobai, G. 1996. "Resistance behavior of Cr-Si-O thin films". United States. https://www.osti.gov/servlets/purl/574773.
@article{osti_574773,
title = {Resistance behavior of Cr-Si-O thin films},
author = {Jankowski, A F and Hayes, J P and Musket, R and Cosandey, F and Gorla, C E and Besser, R S and Westerlind, V and Cobai, G},
abstractNote = {Thin coatings of Cr-Si-O are assessed for use as a resistor. The submicron thick films are sputter deposited using a (l-x)Ar-(x)O{sub 2} working gas. Several compacts of metal and oxide powders are commercially prepared for use as the sputter targets. The deposition process yields film compositions which range from 2 to 30 at.% Cr and 20 to 45 at.% Si as measured using Rutherford backscattering. A broad range of resistivities from 10{sup 1} to 10{sup 14}{Omega} cm are found as measured through the film thickness between metal pads deposited onto the Cr-Si-O surface. The film structure and morphology are characterized using transmission electron microscopy from which the resistance behavior can be correlated to the distribution of metallic particles. Thermal aging reveals the metastability of the Cr- Si-O film morphology and resistance behavior.},
doi = {},
url = {https://www.osti.gov/biblio/574773}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Oct 23 00:00:00 EDT 1996},
month = {Wed Oct 23 00:00:00 EDT 1996}
}

Conference:
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