Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

Salinger, A G; Shadid, J N; Hutchinson, S A

doi:10.2172/574294

Title: Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations

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Abstract

A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.

Authors:

Salinger, A G; Shadid, J N; Hutchinson, S A ^[1]

and others

Publication Date:: Thu Jan 01 00:00:00 EST 1998

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE Office of Energy Research, Washington, DC (United States)

OSTI Identifier:: 574294

Report Number(s):: SAND-98-0242
ON: DE98003218; TRN: 98:001219

DOE Contract Number:: AC04-94AL85000

Resource Type:: Technical Report

Resource Relation:: Other Information: PBD: Jan 1998

Country of Publication:: United States

Language:: English

Subject:: 66 PHYSICS; 99 MATHEMATICS, COMPUTERS, INFORMATION SCIENCE, MANAGEMENT, LAW, MISCELLANEOUS; GALLIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; PARALLEL PROCESSING; ARRAY PROCESSORS; HEAT TRANSFER; FINITE ELEMENT METHOD; MESH GENERATION; ALGORITHMS

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                    Salinger, A G, Shadid, J N, and Hutchinson, S A. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations.  United States: N. p., 1998. 
        Web.  doi:10.2172/574294.

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                    Salinger, A G, Shadid, J N, & Hutchinson, S A. Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations.  United States.  https://doi.org/10.2172/574294

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                    Salinger, A G, Shadid, J N, and Hutchinson, S A. 1998.  
        "Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations".  United States.  https://doi.org/10.2172/574294.  https://www.osti.gov/servlets/purl/574294.

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@article{osti_574294,

  title        = {Analysis of gallium arsenide deposition in a horizontal chemical vapor deposition reactor using massively parallel computations},

  author       = {Salinger, A G and Shadid, J N and Hutchinson, S A},

  abstractNote = {A numerical analysis of the deposition of gallium from trimethylgallium (TMG) and arsine in a horizontal CVD reactor with tilted susceptor and a three inch diameter rotating substrate is performed. The three-dimensional model includes complete coupling between fluid mechanics, heat transfer, and species transport, and is solved using an unstructured finite element discretization on a massively parallel computer. The effects of three operating parameters (the disk rotation rate, inlet TMG fraction, and inlet velocity) and two design parameters (the tilt angle of the reactor base and the reactor width) on the growth rate and uniformity are presented. The nonlinear dependence of the growth rate uniformity on the key operating parameters is discussed in detail. Efficient and robust algorithms for massively parallel reacting flow simulations, as incorporated into our analysis code MPSalsa, make detailed analysis of this complicated system feasible.},

  doi          = {10.2172/574294},

  url          = {https://www.osti.gov/biblio/574294},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Thu Jan 01 00:00:00 EST 1998},

  month        = {Thu Jan 01 00:00:00 EST 1998}

}

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