Demonstration of real-time monitoring of a photolithographic exposure process using chemical ionization mass spectrometry
- Sandia National Labs., Albuquerque, NM (United States). Analytical Chemistry Dept.
Silicon wafers are coated with photoresist and exposed to ultraviolet (UV) light in a laboratory to simulate typical conditions expected in an actual semiconductor manufacturing process tool. Air is drawn through the exposure chamber and analyzed using chemical ionization mass spectrometry (CI/MS). Species that evaporate or outgas from the wafer are thus detected. The purpose of such analyses is to determine the potential of CI/MS as a real-time process monitoring tool. Results demonstrate that CI/MS can remotely detect the products evolved before, during, and after wafer UV exposure; and that the quantity and type of products vary with the photoresist coated on the wafer. Such monitoring could provide semiconductor manufacturers benefits in quality control and process analysis. Tool and photoresist manufacturers could also realize benefits from this measurement technique with respect to new tool, method, or photoresist development. The benefits realized can lead to improved device yields and reduced product and development costs.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 573307
- Report Number(s):
- SAND-98-0418; ON: DE98002844; TRN: AHC29807%%98
- Resource Relation:
- Other Information: PBD: Feb 1998
- Country of Publication:
- United States
- Language:
- English
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