Semiconductors for high temperature active devices: silicon, GaAs, and GaP. [For use in geothermal wells]

Conference · Tue Jan 01 00:00:00 EST 1980

OSTI ID:5695750

Coquat, J A

This paper reviews developments during the past three years in the area of high-temperature active semiconductor devices for use at 275/sup 0/C in instrumentation needed to characterize geothermal resources. Surveys of silicon bipolar, MOS, and JFET devices operated at high temperature and development work on high temperature silicon CMOS logic and DI analog circuits are reviewed. The initial results of developmental work on GaAs and GaP diodes are discussed. These efforts have identified several promising devices for high temperature applications; however, further development is required to resolve such problems as excessive leakage currents, metallization degradation, device stability, and long term aging.

• Research Organization: Sandia Labs., Albuquerque, NM (USA)
• DOE Contract Number: EY-76-C-04-0789
• OSTI ID: 5695750
• Report Number(s): SAND-80-0379C; CONF-800504-1
• Resource Relation: Conference: Electro/80 professional program meeting, Boston, MA, USA, 13 May 1980; Other Information: Portions of document are illegible
• Country of Publication: United States
• Language: English

Related Subjects

15 GEOTHERMAL ENERGY
47 OTHER INSTRUMENTATION
GEOTHERMAL WELLS
WELL LOGGING EQUIPMENT
SEMICONDUCTOR DEVICES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HIGH TEMPERATURE
INTEGRATED CIRCUITS
LEAKAGE CURRENT
LOGIC CIRCUITS
MOS TRANSISTORS
SEMICONDUCTOR DIODES
SILICON
SILICON DIODES
TECHNOLOGY ASSESSMENT
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
MICROELECTRONIC CIRCUITS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMIMETALS
TRANSISTORS
WELLS
Geothermal Legacy
150303* - Geothermal Exploration & Exploration Technology- Exploratory Drilling & Well Logging
440400 - Well Logging Instrumentation