Ion beam processing of advanced electronic materials

Conference · Sun Jan 01 00:00:00 EST 1989

OSTI ID:5683961

Cheung, N W; Marwick, A D; Roberto, J B ^[1]

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1. eds.; California Univ., Berkeley, CA (USA)

This report contains research programs discussed at the materials research society symposia on ion beam processing of advanced electronic materials. Major topics include: shallow implantation and solid-phase epitaxy; damage effects; focused ion beams; MeV implantation; high-dose implantation; implantation in III-V materials and multilayers; and implantation in electronic materials. Individual projects are processed separately for the data bases. (CBS)

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5683961
• Report Number(s): CONF-8904275-; ON: DE89017342; TRN: 89-026683
• Resource Relation: Conference: Symposium on ion beam processing of advanced electronic materials, San Diego, CA (USA), 25-27 Apr 1989
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ION IMPLANTATION
RESEARCH PROGRAMS
CRYSTAL DEFECTS
CRYSTAL LATTICES
ION BEAMS
LAYERS
PHASE TRANSFORMATIONS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
BEAMS
CRYSTAL STRUCTURE
MATERIALS
360106* - Metals & Alloys- Radiation Effects
360206 - Ceramics
Cermets
& Refractories- Radiation Effects
360605 - Materials- Radiation Effects
360202 - Ceramics
Cermets
& Refractories- Structure & Phase Studies
360102 - Metals & Alloys- Structure & Phase Studies
360602 - Other Materials- Structure & Phase Studies