Small area silicon diffused junction x-ray detectors
The low temperature performance of silicon diffused junction detectors in the measurement of low energy x-rays is reported. The detectors have an area of 0.04 cm/sup 2/ and a thickness of 100 ..mu..m. The spectral resolutions of these detectors were found to be in close agreement with expected values indicating that the defects introduced by the high temperature processing required in the device fabrication were not deleteriously affecting the detection of low energy x-rays. Device performance over a temperature range of 77 to 150/sup 0/K is given. These detectors were designed to detect low energy x-rays in the presence of minimum ionizing electrons. The successful application of silicon diffused junction technology to x-ray detector fabrication may facilitate the development of other novel silicon x-ray detector designs.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 5657421
- Report Number(s):
- LBL-12736; CONF-811012-53; ON: DE82005843; TRN: 82-008881
- Resource Relation:
- Conference: IEEE symposium on nuclear science, San Francisco, CA, USA, 21 Oct 1981
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
RADIATION DETECTORS
FABRICATION
PERFORMANCE
X-RAY DETECTION
SILICON
SILICON OXIDES
SPACE VEHICLES
CHALCOGENIDES
DETECTION
ELEMENTS
MEASURING INSTRUMENTS
OXIDES
OXYGEN COMPOUNDS
RADIATION DETECTION
SEMIMETALS
SILICON COMPOUNDS
VEHICLES
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments