Performance of digital integrated circuit technologies at very high temperatures
Results of investigations of the performance and reliability of digital bipolar and CMOS integrated circuits over the 25 to 340/sup 0/C range are reported. Included in these results are both parametric variation information and analysis of the functional failure mechanisms. Although most of the work was done using commercially available circuits (TTL and CMOS) and test chips from commercially compatible processes, some results of experimental simulations of dielectrically isolated CMOS are also discussed. It was found that commercial Schottky clamped TTL, and dielectrically isolated, low power Schottky-clamped TTL, functioned to junction temperatures in excess of 325/sup 0/C. Standard gold doped TTL functioned only to 250/sup 0/C, while commercial, isolated I/sup 2/L functioned to the range 250/sup 0/C to 275/sup 0/C. Commercial junction isolated CMOS, buffered and unbuffered, functioned to the range 280/sup 0/C to 310/sup 0/C/sup +/, depending on the manufacturer. Experimental simulations of simple dielectrically isolated CMOS integrated circuits, fabricated with heavier doping levels than normal, functioned to temperatures in excess of 340/sup 0/C. High temperature life testing of experimental, silicone-encapsulated simple TTL and CMOS integrated circuits have shown no obvious life limiting problems to date. No barrier to reliable functionality of TTL bipolar or CMOS integrated ciruits at temperatures in excess of 300/sup 0/C has been found.
- Research Organization:
- Sandia Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- EY-76-C-04-0789
- OSTI ID:
- 5640867
- Report Number(s):
- SAND-79-2092C; CONF-800410-2
- Resource Relation:
- Conference: Electronic component conference, San Francisco, CA, USA, 28 Apr 1980
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
15 GEOTHERMAL ENERGY
INTEGRATED CIRCUITS
PERFORMANCE
RELIABILITY
AIRCRAFT
CONTROL
DIELECTRIC MATERIALS
ELECTRICAL PROPERTIES
ENGINES
FAILURES
GEOTHERMAL WELLS
JOINTS
SCHOTTKY BARRIER DIODES
TEMPERATURE DEPENDENCE
VERY HIGH TEMPERATURE
WELL LOGGING
ELECTRONIC CIRCUITS
MATERIALS
MICROELECTRONIC CIRCUITS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
WELLS
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