Compound semiconductor field-effect transistors with improved dc and high frequency performance
A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is deposited. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region the Si-channel tail, but does not contribute substantially to the acceptor concentration in the region of the buried p-implant. As a result, the invention provides for improved field effect transistor devices with enhancement of both DC and high-frequency performance.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- US Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- PATENTS-US-A8580015
- Application Number:
- ON: DE98001375; PAN: 8-580,015; TRN: AHC29802%%153
- OSTI ID:
- 555593
- Resource Relation:
- Other Information: PBD: 1995
- Country of Publication:
- United States
- Language:
- English
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