Semiconductor drift chamber: an application of a novel charge transport scheme

Conference · Mon Aug 01 00:00:00 EDT 1983

OSTI ID:5549333

Gatti, E; Rehak, P

The purpose of this paper is to describe a novel charge tranport scheme in semiconductors in which the field responsible for the charge transport is independent of the depletion field. The application of the novel charge transport scheme leads to the following new semiconductor detectors: (1) Semiconductor Draft Chamber; (2) Ultra low capacitance - large semiconductor x-ray spectrometers and photodiodes; and (3) Fully depleted thick CCD. Special attention is paid to the concept of the Semiconductor Draft Chamber as a position sensing detector for high energy charged particles. Position resolution limiting factors are considered, and the values of the resolutions are given.

• Research Organization: Brookhaven National Lab., Upton, NY (USA)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5549333
• Report Number(s): BNL-33523; CONF-8306110-4; ON: DE84002875
• Resource Relation: Conference: 2. Pisa meeting on advanced detectors, Castiglione della Pescaia, Italy, 2 Jun 1983
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SEMICONDUCTOR DETECTORS
POSITION SENSITIVE DETECTORS
CHARGE-COUPLED DEVICES
ELECTRIC POTENTIAL
PHOTODIODES
SPATIAL RESOLUTION
X-RAY SPECTROMETERS
MEASURING INSTRUMENTS
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTROMETERS
440104* - Radiation Instrumentation- High Energy Physics Instrumentation