Radiation damage in semiconductor detectors
Conference
·
OSTI ID:5531674
A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced.
- Research Organization:
- Brookhaven National Lab., Upton, NY (USA)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 5531674
- Report Number(s):
- BNL-30616; CONF-811012-56; ON: DE82010248; TRN: 82-008879
- Resource Relation:
- Conference: IEEE symposium on nuclear science, San Francisco, CA, USA, 21 Oct 1981
- Country of Publication:
- United States
- Language:
- English
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