Positron diffusion in Si

Conference · Sat Jun 01 00:00:00 EDT 1985

OSTI ID:5526036

Nielsen, B; Lynn, K G; Vehanen, A; Schultz, P J

Positron diffusion in Si(100) and Si(111) has been studied using a variable energy positron beam. The positron diffusion coefficient is found to be D/sub +/ = 2.7 +- 0.3 cm/sup 2//sec using a Makhov-type positron implantation profile, which is demonstrated to fit the data more reliably than the more commonly applied exponential profile. The diffusion related parameter, E/sub 0/, which results from the exponential profile, is found to be 4.2 +- 0.2 keV, significantly longer than previously reported values. A drastic reduction in E/sub 0/ is found after annealing the sample at 1300 K, showing that previously reported low values of E/sub 0/ are probably associated with the thermal history of the sample.

• Research Organization: Brookhaven National Lab., Upton, NY (USA); Helsinki Univ. of Technology, Otaniemi (Finland). Lab. of Physics; Western Ontario Univ., London (Canada). Dept. of Physics
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5526036
• Report Number(s): BNL-36700; CONF-850169-16; ON: DE85014831
• Resource Relation: Conference: 7. international conference on positron annihilation, New Delhi, India, 6 Jan 1985; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
74 ATOMIC AND MOLECULAR PHYSICS
POSITRON COLLISIONS
DIFFUSION
SILICON
CARRIER MOBILITY
MONOCRYSTALS
COLLISIONS
CRYSTALS
ELEMENTS
MOBILITY
SEMIMETALS
360603* - Materials- Properties
640303 - Atomic
Molecular & Chemical Physics- Positronium
Muonium
& Muonic & Mesic Atoms & Molecules