Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

Technical Report · Tue Jan 01 00:00:00 EST 1980

DOI:https://doi.org/10.2172/5497048· OSTI ID:5497048

Hopkins, R H; Davis, J R; Rohatgi, A; Campbell, R B; Blais, P D; Rai-Choudhury, P; Stapleton, R E; Mollenkopf, H C; McCormick, J R

The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

• Research Organization: Westinghouse Electric Corp., Pittsburgh, PA (United States). Research and Development Center
• DOE Contract Number: NAS-7-100-954331
• OSTI ID: 5497048
• Report Number(s): DOE/JPL/954331-80/9
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
IMPURITIES
SILICON SOLAR CELLS
CARRIER LIFETIME
CHEMICAL COMPOSITION
CRYSTAL DEFECTS
CRYSTAL GROWTH
CZOCHRALSKI METHOD
DENDRITIC WEB GROWTH METHOD
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
FABRICATION
GETTERING
ISOLATED VALUES
MATHEMATICAL MODELS
METALS
PERFORMANCE
PROCESSING
QUANTITATIVE CHEMICAL ANALYSIS
RECOMBINATION
SPECTRAL RESPONSE
TABLES
TRAPS
CHEMICAL ANALYSIS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
DATA
DATA FORMS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
INFORMATION
LIFETIME
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion