Ion implantation of boron in germanium
Ion implantation of /sup 11/B/sup +/ into room temperature Ge samples leads to a p-type layer prior to any post implant annealing steps. Variable temperature Hall measurements and deep level transient spectroscopy experiments indicate that room temperature implantation of /sup 11/B/sup +/ into Ge results in 100% of the boron ions being electrically active as shallow acceptor, over the entire dose range (5 x 10/sup 11//cm/sup 2/ to 1 x 10/sup 14//cm/sup 2/) and energy range (25 keV to 100 keV) investigated, without any post implant annealing. The concentration of damage related acceptor centers is only 10% of the boron related, shallow acceptor center concentration for low energy implants (25 keV), but becomes dominant at high energies (100 keV) and low doses (<1 x 10/sup 12//cm/sup 2/). Three damage related hole traps are produced by ion implantation of /sup 11/B/sup +/. Two of these hole traps have also been observed in ..gamma..-irradiated Ge and may be oxygen-vacancy related defects, while the third trap may be divacancy related. All three traps anneal out at low temperatures (<300/sup 0/C). Boron, from room temperature implantation of BF/sub 2//sup +/ into Ge, is not substitutionally active prior to a post implant annealing step of 250/sup 0/C for 30 minutes. After annealing additional shallow acceptors are observed in BF/sub 2//sup +/ implanted samples which may be due to fluorine or flourine related complexes which are electrically active.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5425716
- Report Number(s):
- LBL-19615; ON: DE85016638
- Resource Relation:
- Other Information: Thesis
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
GERMANIUM
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
ANNEALING
BORON 11 BEAMS
BORON FLUORIDES
BORON IONS
CRYSTALS
KEV RANGE 10-100
MOLECULAR IONS
RADIATION DOSES
SEMICONDUCTOR MATERIALS
BEAMS
BORON COMPOUNDS
CHARGED PARTICLES
DOSES
ELEMENTS
ENERGY RANGE
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
ION BEAMS
IONS
KEV RANGE
MATERIALS
METALS
RADIATION EFFECTS
360605* - Materials- Radiation Effects
654001 - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments