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Title: Microwave characterization of high-temperature superconductors

Conference ·
DOI:https://doi.org/10.1117/12.965176· OSTI ID:5423086

Thick (10-15 {mu}m) Tl-Ba-Ca-Cu-O films have been deposited onto yttria-stabilized zirconia and Ag substrates by d.c. magnetron sputtering techniques. Direct deposition onto 1'' diameter yttria-stabilized zirconia yields films with typical 22 GHz surface resistance (R{sub s}) values of 5.2 {plus minus} 2 m{Omega} and 52 {plus minus} 2 m{Omega} at 10 K and 77 K, respectively. For comparison, R{sub s} of Cu at this same frequency is 10 m{Omega} at 4 K and 22 m{Omega} at 77 K. Tl-Ba-Ca-Cu-O films have also been deposited onto 1'' diameter Ag substrates using Au/Cu, Cu, and BaF{sub 2} buffer layers. The lowest R{sub s} values were obtained on films with a BaF{sub 2} buffer layer, typical values being 7.8 {plus minus} 2 m{Omega} and 30.6 {plus minus} 2 m{Omega} (measured at 22 GHz) at 10 K and 77 K, respectively. Larger films (1.5'' diameter) with similar R{sub s} values were prepared using this same technique, demonstrating that the fabrication process can be scaled to larger surface areas. These films are promising for radiofrequency cavity applications because they are thick (50-75 times the London penetration depth), have relatively large surface areas, are fabricated on metallic substrates, and have R{sub s} values that are competitive with Cu at 77 K and are lower than Cu at 4 K. Because they are polycrystalline and unoriented, it is anticipated that their R{sub s} values can be lowered by improving the processing technique. High-quality films of YBa{sub 2}Cu{sub 3}O{sub 7} have been electron-beam deposited onto 1'' LaGaO{sub 3} and 1.5'' LaAlO{sub 3} substrates. The 1'' sample is characterized by R{sub s} values of 0.2 {plus minus} 0.1 m{Omega} at 4 K and 18.6 {plus minus} 2 m{Omega} at 77 K. The 4-K value is only 2-4 times higher than Nb. The 1.5'' sample has R{sub s} values (measured at 18 GHz) of 0.93 {plus minus} 2 m{Omega} and 71 {plus minus} 3 m{Omega} at 10 K and 77 K, respectively. 18 refs., 8 figs.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
DOE/ER
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
5423086
Report Number(s):
LA-UR-89-3616; CONF-891090-1; ON: DE90002408
Resource Relation:
Journal Volume: 1187; Conference: Conference on monitoring and control of plasma-enhanced processing and multichamber growth of semiconductors, Santa Clara, CA (USA), 8-13 Oct 1989
Country of Publication:
United States
Language:
English

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