Microwave characterization of high-temperature superconductors
Thick (10-15 {mu}m) Tl-Ba-Ca-Cu-O films have been deposited onto yttria-stabilized zirconia and Ag substrates by d.c. magnetron sputtering techniques. Direct deposition onto 1'' diameter yttria-stabilized zirconia yields films with typical 22 GHz surface resistance (R{sub s}) values of 5.2 {plus minus} 2 m{Omega} and 52 {plus minus} 2 m{Omega} at 10 K and 77 K, respectively. For comparison, R{sub s} of Cu at this same frequency is 10 m{Omega} at 4 K and 22 m{Omega} at 77 K. Tl-Ba-Ca-Cu-O films have also been deposited onto 1'' diameter Ag substrates using Au/Cu, Cu, and BaF{sub 2} buffer layers. The lowest R{sub s} values were obtained on films with a BaF{sub 2} buffer layer, typical values being 7.8 {plus minus} 2 m{Omega} and 30.6 {plus minus} 2 m{Omega} (measured at 22 GHz) at 10 K and 77 K, respectively. Larger films (1.5'' diameter) with similar R{sub s} values were prepared using this same technique, demonstrating that the fabrication process can be scaled to larger surface areas. These films are promising for radiofrequency cavity applications because they are thick (50-75 times the London penetration depth), have relatively large surface areas, are fabricated on metallic substrates, and have R{sub s} values that are competitive with Cu at 77 K and are lower than Cu at 4 K. Because they are polycrystalline and unoriented, it is anticipated that their R{sub s} values can be lowered by improving the processing technique. High-quality films of YBa{sub 2}Cu{sub 3}O{sub 7} have been electron-beam deposited onto 1'' LaGaO{sub 3} and 1.5'' LaAlO{sub 3} substrates. The 1'' sample is characterized by R{sub s} values of 0.2 {plus minus} 0.1 m{Omega} at 4 K and 18.6 {plus minus} 2 m{Omega} at 77 K. The 4-K value is only 2-4 times higher than Nb. The 1.5'' sample has R{sub s} values (measured at 18 GHz) of 0.93 {plus minus} 2 m{Omega} and 71 {plus minus} 3 m{Omega} at 10 K and 77 K, respectively. 18 refs., 8 figs.
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 5423086
- Report Number(s):
- LA-UR-89-3616; CONF-891090-1; ON: DE90002408
- Resource Relation:
- Journal Volume: 1187; Conference: Conference on monitoring and control of plasma-enhanced processing and multichamber growth of semiconductors, Santa Clara, CA (USA), 8-13 Oct 1989
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BARIUM OXIDES
ELECTRIC CONDUCTIVITY
CALCIUM OXIDES
COPPER OXIDES
SUPERCONDUCTING FILMS
THALLIUM OXIDES
DEFECTS
DEPOSITION
GALLIUM OXIDES
LANTHANUM OXIDES
LOW TEMPERATURE
MAGNETIC FIELDS
MICROWAVE RADIATION
SILVER
SUBSTRATES
SURFACE PROPERTIES
YTTRIUM OXIDES
ZIRCONIUM OXIDES
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CALCIUM COMPOUNDS
CHALCOGENIDES
COPPER COMPOUNDS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
GALLIUM COMPOUNDS
LANTHANUM COMPOUNDS
METALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
RARE EARTH COMPOUNDS
THALLIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
YTTRIUM COMPOUNDS
ZIRCONIUM COMPOUNDS
360204* - Ceramics
Cermets
& Refractories- Physical Properties