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Title: Low cost Czochralski crystal growing technology: near term implementation of the flat plate photovoltaic cost reduction of the Low Cost Solar Array Project. Fourth quarterly progress report, January 1-March 31, 1980

Technical Report ·
DOI:https://doi.org/10.2172/5416501· OSTI ID:5416501

The purpose of the program is to demonstrate the growth of up to 150 kilograms of 6'' diameter single crystal silicon ingot from one crucible by the Czochralski (CZ) method. The method being developed relies upon conventional CZ technology combined with new equipment and process designs and concepts. These concepts alternate cycles of crystal growth and hot melt replenishment and are designed to be ultimately suitable for use in a high volume production facility. A Hamco Model CG2000 RC crystal grower will be utilized for the project. Modifications will be comprehended into the puller which will allow a special chamber to be fitted. This chamber will allow for the storage of polycrystalline silicon rod to be used in the accelerated melt and crucible recharge cycle. A vacuum tight isolation valve will be incorporated into the system to allow retrieval of grown crystals and crucible melt replenishment without contamination. Additional modifications designed into the system allow for accelerated methods of melting both polycrystalline silicon rods and polycrystalline silicon chunks by the use of R.F. induction heating. Progress is reported. (WHK)

Research Organization:
Kayex Corp., Rochester, NY (USA)
DOE Contract Number:
NAS-7-100-955270
OSTI ID:
5416501
Report Number(s):
DOE/JPL/955270-80/1
Country of Publication:
United States
Language:
English