Atomic scale characterization of semiconductor interfaces by scanning transmission electron microscopy
- Oak Ridge National Lab., TN (United States). Solid State Div.
- Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. Through the technique of Z-contrast imaging, it is now possible to form atomic resolution images with high compositional sensitivity from which atomic column positions can be directly determined. An incoherent image of this nature also allows atomic resolution chemical analysis to be performed, by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. These powerful techniques, combined with atomic-scale calculations, constitute a powerful probe of the structural, kinetic and thermodynamic properties of complex materials. The authors show the direct observation of As segregated to specific sites in a Si grain boundary, and present a candidate model for the structure of the Si/SiO{sub 2} interface.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 537365
- Report Number(s):
- CONF-971132-1; ON: DE97007497; BR: KC0202040; TRN: AHC29722%%130
- Resource Relation:
- Conference: International conference on materials and process characterization for VSLI, Shanghai (China), 4-7 Nov 1997; Other Information: PBD: May 1997
- Country of Publication:
- United States
- Language:
- English
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