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Title: Vacuum deposited polycrystalline silicon films for solar cell applications. Second quarterly technical progress report. January 1-March 31, 1980

Technical Report ·
DOI:https://doi.org/10.2172/5355279· OSTI ID:5355279

A careful study of a specially formed thin silicon layer on TiB/sub 2/-coated sapphire reveals that the interaction layer of TiSi/sub 2/ is composed of larger grains. Processing steps were developed which lead closer to the goal of fabricating polycrystalline silicon photovoltaic devices completely by vacuum deposition. Both n-type and p-type silicon are now being deposited. New deposition masks were made for depositing the n-regions upon the p-layers. New electrode deposition masks were also made for a direct electroding process to replace the photolithographic process used previously. The TiB/sub 2/ bottom electrode fabrication has been achieved in a single vacuum chamber. Reaction constants and activation energy for TiB/sub 2/ layer formation were determined to be less than those reported by other authors for bulk material. Studies of crystallite growth and interfacial interactions have continued. Major sources of undesirable impurities have been identified and removed from the vacuum chambers. The changes made this quarter have not been incorporated into a completed photovoltaic device.

Research Organization:
Johns Hopkins Univ., Laurel, MD (USA). Applied Physics Lab.
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5355279
Report Number(s):
SERI/PR-8278-1-T2
Country of Publication:
United States
Language:
English