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Title: Influence of ion beam mixing on the growth of high temperature oxide superconducting thin film

Conference ·
DOI:https://doi.org/10.1557/PROC-157-513· OSTI ID:5303078

The superconducting properties of high temperature superconductor thin films are dependent on the quality of the substrate used to grow these films. In order to maximize the lattice matching between the superconducting film and the substrate, we have used a YBa{sub 2}Cu{sub 3}O{sub 7} thin film deposited on {l angle}100{r angle} SrTiO{sub 3} as a template. The first film was prepared by coevaporation of Y, BaF{sub 2} and Cu on {l angle}100{r angle} SrTiO{sub 3}, followed by an anneal in wet'' oxygen at 850{degree}C. This film showed a sharp transition at about 90 K. A thicker layer of about 5000 A was then deposited on top of this first 2000 {angstrom} film, using the same procedure. After the post anneal at 850{degree}C, the transition took place at 80 K and no epitaxy of the second film was observed. Ion beam mixing at 400{degree}C, using 400 keV O ions was done at the interface of the two films (the second one being not annealed). After the post anneal, the film displayed an improved Tc at 90K. Moreover, epitaxy was shown to take place from the interface SrTiO{sub 3}-123 film towards the surface and was dependent of the dose. These results will be discussed from the data obtained from Rutherford backscattering spectroscopy (RBS) combined with channeling experiments, x-ray diffraction (XRD) and scanning electron microscopy (SEM) observations. 8 refs., 2 figs., 2 tabs.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
DOE/MA
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
5303078
Report Number(s):
LA-UR-89-4080; CONF-891119-52; ON: DE90004837; TRN: 90-003732
Resource Relation:
Journal Volume: 157; Conference: Materials Research Society fall meeting, Boston, MA (USA), 27 Nov - 2 Dec 1989
Country of Publication:
United States
Language:
English