Effects of temperature on MOS radiation response
Conference
·
OSTI ID:527898
Effects of irradiation and annealing temperature on radiation-induced charge densities are explored for MOS transistors. Both interface- and border-trap density increase with increasing radiation temperature, while the net oxide-trap charge density decreases.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- Department of Defense, Washington, DC (United States); USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 527898
- Report Number(s):
- SAND-97-0602C; CONF-970934-1; ON: DE97003729; TRN: 97:005150
- Resource Relation:
- Conference: RADECS 97: radiations and their effects on devices and systems conference, Cannes (France), 15-19 Sep 1997; Other Information: PBD: 1997
- Country of Publication:
- United States
- Language:
- English
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