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Title: Power ratings of rf thin film resistive attenuators

Abstract

Most radio frequency (rf) assemblies built using hybrid microcircuit technology employ thin film attenuators. These attenuators are subject to moderate rf peak power and to moderate average power. Because of intracircuit mismatch, extra considerations of power requirements must be given. To meet these requirements, selected thin film resistive attenuators operated under large rf power conditions were investigated, and the power margin in which these attenuators can be used was defined.

Authors:
Publication Date:
Research Org.:
Bendix Corp., Kansas City, MO (United States)
OSTI Identifier:
5268769
Report Number(s):
BDX-613-2404
DOE Contract Number:  
AC04-76DP00613
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; PRINTED CIRCUITS; RESISTORS; OPERATION; PERFORMANCE; RF SYSTEMS; ATTENUATION; CURRENT LIMITERS; EXPERIMENTAL DATA; MICROPROCESSORS; DATA; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; EQUIPMENT; INFORMATION; NUMERICAL DATA; 420800* - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Smith, F. R. Power ratings of rf thin film resistive attenuators. United States: N. p., 1980. Web. doi:10.2172/5268769.
Smith, F. R. Power ratings of rf thin film resistive attenuators. United States. https://doi.org/10.2172/5268769
Smith, F. R. 1980. "Power ratings of rf thin film resistive attenuators". United States. https://doi.org/10.2172/5268769. https://www.osti.gov/servlets/purl/5268769.
@article{osti_5268769,
title = {Power ratings of rf thin film resistive attenuators},
author = {Smith, F. R.},
abstractNote = {Most radio frequency (rf) assemblies built using hybrid microcircuit technology employ thin film attenuators. These attenuators are subject to moderate rf peak power and to moderate average power. Because of intracircuit mismatch, extra considerations of power requirements must be given. To meet these requirements, selected thin film resistive attenuators operated under large rf power conditions were investigated, and the power margin in which these attenuators can be used was defined.},
doi = {10.2172/5268769},
url = {https://www.osti.gov/biblio/5268769}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Jun 01 00:00:00 EDT 1980},
month = {Sun Jun 01 00:00:00 EDT 1980}
}