Upset and latchup thresholds in CD-4000 series CMOS devices. IRT 4337-007

Conference · Tue Jan 01 00:00:00 EST 1980

OSTI ID:5268744

Harrity, J. W.; Gammill, P. E.

A test program designed to verify that neutron irradiation and subsequent anneal is an effective method for suppressing ionization-induced latchup yielded as a byproduct a large body of data covering the upset and latchup thresholds of non-neutron-irradiated bulk CMOS devices. Sixty-six part types in the hardened RCA CD-4000 series and four National Semiconductor part types were tested. Upset levels ranged from 2-200 rad(Si). Latchup was observed in forty of the seventy part types tested. Latchup thresholds ranged from 9 to 708 rad(Si). Latchup currents ranged from 15 mA to 1.9 A.

• Research Organization: IRT Corp., San Diego, CA (USA); Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5268744
• Report Number(s): SAND-80-0333C; CONF-800703-4; TRN: 80-011462
• Resource Relation: Conference: Annual conference on nuclear and space radiation effects, Ithaca, NY, USA, 15 Jul 1980
• Country of Publication: United States
• Language: English

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