Sandia LSI accelerated aging and data acquisition techniques

Technical Report · Tue Apr 01 00:00:00 EST 1980

DOI:https://doi.org/10.2172/5268729· OSTI ID:5268729

Walker, J. E.

The purpose of the Microelectronic Evaluation Laboratory at Sandia is to develop a program for evaluating CMOS LSI (complementary metal oxide silicon - large scale integrated) technology devices which are being used for the first time in a weapon system. These evaluations are based on accelerated aging studies and electrical tests to determine the reliability and life of the devices. In accelerated aging, specific, controlled stresses are applied to the device to accelerate time-to-failure. Data are used tin mathematical models to estimate life in acutal use. The stresses used for this technology are temperature and voltage. The devices are stored at temperatures with or without voltage applied (steady-state or cyclical) and periodically tested until at least 50% failures are encountered. Since most current technologies use epoxy-die-attachment, aging temperatures must be under 200/sup 0/C. This delays device failure, and a 16% failure level is used when this extrapolation is considered valid. Statistical analysis is performed on the resultant data to predict reliability with time. The equipment and procedures used for accelerated aging tests are described in detail. The data acquisition system and its use are discussed. All devices, after functional failure has occurred, are given to the failure analysis group for failure evaluations. In order to improve reliability predictions, failure analysis is most concerned with the separation of freak and main life mechanisms. Through these evaluations, higher reliability and longer device life have become a milestone of the future. (LCL)

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5268729
• Report Number(s): SAND-80-0969
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR DEVICES
AGING
FAILURES
PERFORMANCE TESTING
DATA ACQUISITION SYSTEMS
ELECTRONIC CIRCUITS
EXPERIMENTAL DATA
MICROPROCESSORS
MOS TRANSISTORS
RELIABILITY
TEMPERATURE DEPENDENCE
TEST FACILITIES
DATA
INFORMATION
NUMERICAL DATA
TESTING
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)