skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Saturation and isotopic replacement of deuterium in low-Z material

Conference ·
OSTI ID:5232848

The saturation and replacement of hydrogen isotopes implanted into TiC, TiB/sub 2/, VB/sub 2/, B/sub 4/C, B, Si, and C has been examined experimentally and modeled theoretically. The deuterium saturation concentrations for these materials varied from .16 to .57. A new isotopic replacement model is presented which predicts isotopic trapping and exchange on the basis of the depth dependence of the implanted ions and the experimentally determined hydrogen saturation concentration. Our results indicate that, for these materials used as coatings on components in a D-T fueled tokamak, T recovery by ion induced replacement with H or D should be feasible and that T buildup will be at tolerable levels.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
EY-76-C-04-0789
OSTI ID:
5232848
Report Number(s):
SAND-79-2341C; CONF-800455-5; TRN: 80-013286
Resource Relation:
Conference: 4. international conference on plasma surface interactions in controlled fusion devices, Garmisch, F.R. Germany, 21 Apr 1980
Country of Publication:
United States
Language:
English