(Defect studies in III-V thin film semiconductors)

Technical Report · Tue Jan 01 00:00:00 EST 1991

DOI:https://doi.org/10.2172/5189768· OSTI ID:5189768

Our primary research objective in 90/91 has been to continue studying misfit dislocation confinement by patterning substrates into mesas before the epitaxial growth of strained layers. This report presents progress for many of the areas of our research. (JL)

• Research Organization: Cornell Univ., Ithaca, NY (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: FG02-86ER45278
• OSTI ID: 5189768
• Report Number(s): DOE/ER/45278-5; ON: DE92000052
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
INTERFACES
DISLOCATIONS
SUBSTRATES
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
ELECTRICAL PROPERTIES
INDIUM ARSENIDES
PROGRESS REPORT
SEMICONDUCTOR MATERIALS
THICKNESS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
DIMENSIONS
DOCUMENT TYPES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LINE DEFECTS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SURFACE COATING
360602* - Other Materials- Structure & Phase Studies
360601 - Other Materials- Preparation & Manufacture