Characterization of advanced electronic materials
- and others
This is the final report of a three-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). Our goal has been to extend the Laboratory`s competency in nuclear and advanced materials by characterizing (measuring and interpreting) physical properties of advanced electronic materials and in this process to bridge the gap between materials synthesis and theoretical understanding. Attention has focused on discovering new physics by understanding the ground states of materials in which electronic correlations dominate their properties. Among several accomplishments, we have discovered and interpreted pressure-induced superconductivity in CeRh{sub 2}Si{sub 2}, boron content in UBe{sub 13-x}B{sub x} and the origin of small gaps in the spin and charge excitation spectra of Ce{sub 3}Bi{sub 4}Pt{sub 3}, and we provided seminal understanding of large magnetoresistive effects in La{sub 1-x}Ca{sub x}MnO{sub 3}. This work has established new research directions at LANL and elsewhere, involved numerous collaborators from throughout the world and attracted several postdoctoral fellows.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Human Resources and Administration, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 516043
- Report Number(s):
- LA-UR-97-2247; ON: DE97008607; TRN: 97:004908
- Resource Relation:
- Other Information: PBD: [1997]
- Country of Publication:
- United States
- Language:
- English
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