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Title: The effect of oxidations on phosphorus-diffused crystalline-silicon substrates

Abstract

The authors examined the effect of oxidation on phosphorus-diffused crystalline-silicon p-type substrates. Oxidations subsequent to the phosphorus diffusion are of interest for passivating surfaces, and are commonly found in both high-efficiency laboratory-cell and commercial-cell fabrication sequences. The authors found a degradation of the bulk lifetime due to the oxidation in a variety of crystalline-silicon substrates that were diffused in various laboratories. The degradation was avoided if there was aluminum present on the back surface of the wafer during the oxidation. The study suggests that impurities gettered during the phosphorus diffusion can be released back into the bulk during a subsequent oxidation, and that the aluminum suppressed the bulk lifetime degradation by reabsorbing these released impurities.

Authors:
 [1]; ; ;  [2];  [3]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Siemens Solar Industries, Camarillo, CA (United States)
  3. Solarex, Frederick, MD (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Assistant Secretary for Energy Efficiency and Renewable Energy, Washington, DC (United States)
OSTI Identifier:
515619
Report Number(s):
SAND-97-0076C; CONF-970640-1
ON: DE97007271; TRN: AHC29718%%134
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: 14. European photovoltaic solar energy conference and exhibition, Barcelona (Spain), 30 Jun - 4 Jul 1997; Other Information: PBD: [1997]
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; OXIDATION; SUBSTRATES; SILICON; P-TYPE CONDUCTORS; PASSIVATION; GETTERING; PHOSPHORUS; DOPED MATERIALS; PERFORMANCE; SERVICE LIFE

Citation Formats

Gee, J M, King, R R, Reiss, J H, Mitchell, K W, and Narayanan, S. The effect of oxidations on phosphorus-diffused crystalline-silicon substrates. United States: N. p., 1997. Web.
Gee, J M, King, R R, Reiss, J H, Mitchell, K W, & Narayanan, S. The effect of oxidations on phosphorus-diffused crystalline-silicon substrates. United States.
Gee, J M, King, R R, Reiss, J H, Mitchell, K W, and Narayanan, S. 1997. "The effect of oxidations on phosphorus-diffused crystalline-silicon substrates". United States. https://www.osti.gov/servlets/purl/515619.
@article{osti_515619,
title = {The effect of oxidations on phosphorus-diffused crystalline-silicon substrates},
author = {Gee, J M and King, R R and Reiss, J H and Mitchell, K W and Narayanan, S},
abstractNote = {The authors examined the effect of oxidation on phosphorus-diffused crystalline-silicon p-type substrates. Oxidations subsequent to the phosphorus diffusion are of interest for passivating surfaces, and are commonly found in both high-efficiency laboratory-cell and commercial-cell fabrication sequences. The authors found a degradation of the bulk lifetime due to the oxidation in a variety of crystalline-silicon substrates that were diffused in various laboratories. The degradation was avoided if there was aluminum present on the back surface of the wafer during the oxidation. The study suggests that impurities gettered during the phosphorus diffusion can be released back into the bulk during a subsequent oxidation, and that the aluminum suppressed the bulk lifetime degradation by reabsorbing these released impurities.},
doi = {},
url = {https://www.osti.gov/biblio/515619}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 01 00:00:00 EDT 1997},
month = {Fri Aug 01 00:00:00 EDT 1997}
}

Conference:
Other availability
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