(Preoxidation cleaning optimization for crystalline silicon)

Conference · Tue Jan 01 00:00:00 EST 1991

OSTI ID:5137430

A series of controlled experiments has been performed in Sandia's Photovoltaic Device Fabrication Laboratory to evaluate the effect of various chemical surface treatments on the recombination lifetime of crystalline silicon wafers subjected to a high-temperature dry oxidation. From this series of experiments we have deduced a relatively simple yet effective cleaning sequence. We have also evaluated the effect of different chemical damage-removal etches for improving the recombination lifetime and surface smoothness of mechanically lapped wafers. This paper presents the methodology used, the experimental results obtained, and our experience with using this process on a continuing basis over a period of many months. 7 refs., 4 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5137430
• Report Number(s): SAND-91-0434C; CONF-911055-3; ON: DE92000981
• Resource Relation: Conference: 22. IEEE photovoltaic specialists conference, Las Vegas, NV (United States), 7-11 Oct 1991
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON SOLAR CELLS
ETCHING
HYDROFLUORIC ACID
MATERIALS
OXIDATION
POTASSIUM HYDROXIDES
SERVICE LIFE
SURFACE CLEANING
ALKALI METAL COMPOUNDS
CHEMICAL REACTIONS
CLEANING
DIRECT ENERGY CONVERTERS
EQUIPMENT
FLUORINE COMPOUNDS
HALOGEN COMPOUNDS
HYDROGEN COMPOUNDS
HYDROXIDES
INORGANIC ACIDS
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POTASSIUM COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE FINISHING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture