Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution

Asher, S E; Ramanathan, K; Wiesner, H; Moutinho, H; Niles, D W

Title: Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution

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Abstract

Junction formation in CuInSe2 (CIS) has been studied by exposing thin films and single-crystal samples to solutions containing NH4OH and CdSO4. The treated samples were analyzed by secondary ion mass spectrometry to determine the amount and distribution of Cd deposited on the surface of the films. Cadmium is found to react with the surface for all the solution exposure times and temperatures studied. The reaction rapidly approaches the endpoint and remains relatively unchanged for subsequent solution exposure. Cadmium in-diffusion, as measured by secondary ion mass spectrometry, is obscured by topography effects in the thin-film samples and by ion-beam mixing and topography in the single-crystal sample.

Authors:

Asher, S E; Ramanathan, K; Wiesner, H; Moutinho, H ^[1]; Niles, D W ^[2]

National Renewable Energy Laboratory
Hewlett-Packard Corporation

Publication Date:: Thu Nov 19 00:00:00 EST 1998

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: US Department of Energy (US)

OSTI Identifier:: 5062

Report Number(s):: NREL/CP-520-25757
ON: DE00005062; TRN: US200306%%246

DOE Contract Number:: AC36-99-GO10337

Resource Type:: Conference

Resource Relation:: Conference: Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution, Presented at the National Center for Photovoltaics Program Review Meeting, Denver, CO (US), 09/08/1998--09/11/1998; Other Information: PBD: 19 Nov 1998

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CADMIUM; DISTRIBUTION; ELECTROLYTES; MASS SPECTROSCOPY; THIN FILMS; TOPOGRAPHY

Citation Formats


                    Asher, S E, Ramanathan, K, Wiesner, H, Moutinho, H, and Niles, D W. Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution.  United States: N. p., 1998. 
        Web.

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                    Asher, S E, Ramanathan, K, Wiesner, H, Moutinho, H, & Niles, D W. Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution.  United States.

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                    Asher, S E, Ramanathan, K, Wiesner, H, Moutinho, H, and Niles, D W. 1998.  
        "Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution".  United States.  https://www.osti.gov/servlets/purl/5062.

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@article{osti_5062,

  title        = {Surface Analytical Study of CuInSe2 Treated in Cd-Containing Partial Electrolyte Solution},

  author       = {Asher, S E and Ramanathan, K and Wiesner, H and Moutinho, H and Niles, D W},

  abstractNote = {Junction formation in CuInSe2 (CIS) has been studied by exposing thin films and single-crystal samples to solutions containing NH4OH and CdSO4. The treated samples were analyzed by secondary ion mass spectrometry to determine the amount and distribution of Cd deposited on the surface of the films. Cadmium is found to react with the surface for all the solution exposure times and temperatures studied. The reaction rapidly approaches the endpoint and remains relatively unchanged for subsequent solution exposure. Cadmium in-diffusion, as measured by secondary ion mass spectrometry, is obscured by topography effects in the thin-film samples and by ion-beam mixing and topography in the single-crystal sample.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/5062},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Thu Nov 19 00:00:00 EST 1998},

  month        = {Thu Nov 19 00:00:00 EST 1998}

}

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