Computer modeling of Y-Ba-Cu-O thin film deposition and growth
- Lawrence Berkeley Lab., CA (United States)
- Florida Atlantic Univ., Boca Raton, FL (United States). Dept. of Physics
The deposition and growth of epitaxial thin films of YBa{sub 2}Cu{sub 3}O{sub 7} are modeled by means of Monte Carlo simulations of the deposition and diffusion of Y, Ba, and Cu oxide particles. This complements existing experimental characterization techniques to allow the study of kinetic phenomena expected to play a dominant role in the inherently non-equilibrium thin film deposition process. Surface morphologies and defect structures obtained in the simulated films are found to closely resemble those observed experimentally. A systematic study of the effects of deposition rate and substrate temperature during in-situ film fabrication reveals that the kinetics of film growth can readily dominate the structural formation of the thin film. 16 refs., 4 figs.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- USDOE; USDOD; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5059056
- Report Number(s):
- LBL-31073; CONF-910580-6; ON: DE92002097; CNN: DARPA MDA972-88-J-1002
- Resource Relation:
- Conference: International conference on advanced materials (ICAM 91), Strasbourg (France), 27-31 May 1991
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM OXIDES
DEPOSITION
COPPER OXIDES
COMPUTERIZED SIMULATION
YTTRIUM OXIDES
SUPERCONDUCTING FILMS
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CHALCOGENIDES
COPPER COMPOUNDS
FILMS
OXIDES
OXYGEN COMPOUNDS
SIMULATION
TRANSITION ELEMENT COMPOUNDS
YTTRIUM COMPOUNDS
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