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Title: Flux pinning defects induced by electron irradiation in Y sub 1 Ba sub 2 Cu sub 3 O sub 7-. delta. single crystals

Conference ·
OSTI ID:5024985
; ; ; ;  [1]; ;  [2]
  1. Illinois Univ., Urbana, IL (United States)
  2. Argonne National Lab., IL (United States)

Single crystals of R{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7-{delta}}, (R=Y, Eu and Gd), have been irradiated with 0.4--1.0 MeV electrons in directions near the c-axis. An incident threshold electron energy for producing flux pinning defects has been found. In-situ TEM studies found no visible defects induced by electron irradiation. This means that point defects or small clusters ({le} 20 {Angstrom}) are responsible for the extra pinning. A consistent interpretation of the data suggests that the most likely pinning defect is the displacement of a Cu atom from the CuO{sub 2} planes.

Research Organization:
Argonne National Lab., IL (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF); USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
5024985
Report Number(s):
ANL/CP-76499; CONF-920402-40; ON: DE92016773; CNN: DMR89-20538; DMR88-09854; DMR90-17371
Resource Relation:
Conference: Material Research Society spring meeting, San Francisco, CA (United States), 27 Apr - 2 May 1992
Country of Publication:
United States
Language:
English